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In situ Photoemission Study on Initial Growth of Er2O3 Films on Si(001)

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Abstract:

Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O2 pressures of 7×10-6 Torr. An interface layer was observed at the initial growth of Er2O3 film on Si, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is a little insufficient at a high substrate temperature.

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Periodical:

Key Engineering Materials (Volumes 373-374)

Pages:

625-628

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.373-374.625

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Online since:

March 2008

Authors:

Y.Y. Zhu, Z.B. Fang, Shu Chen, C. Liao, Z.M. Jiang

Keywords:

Dielectric Thin Films, Interface Chemistry, Molecular Beam Epitaxy (MBE), Surface Chemistry

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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