Paper Titles
Preparation and Characterization of Titania Thin Films
p.569
Development of Silicon Carbide Coating on Al2O3 Ceramics from Precursor Polymers by Radiation Curing
p.573
Accelerated Degradation Test of Indium Tin Oxide (ITO) Thin Films Deposited by RF Magnetron Sputter
p.577
Local Acceleration Effects of Adatom at the Vicinity on the Surface: Case of Co Nano Thin-Films on Al Surface
p.581
Laser-Assisted Synthesis of Amorphous/Pseudoamorphous GaN Thin Films and Nanostructures
p.585
The Effects of Nitrogen and Annealing on the Electrical Property of the Diamond-Like Carbon (DLC) Films
p.589
The Anisotropic Properties of the Tape Cast Si3N4 Ceramics with Rod-Like β-Si3N4 Seeds Addition
p.593
Fabrication and Characterization of Zirconia-Based New Ceramic Composites for Thermal Barrier Coatings
p.597
Design and Characterization of Porosity Gradient for the Laminated Alumina Tubes
p.601

Laser-Assisted Synthesis of Amorphous/Pseudoamorphous GaN Thin Films and Nanostructures

Article Preview

Abstract:

Amorphous/pseudoamorphous GaN was prepared by pulsed-laser ablation at room temperature without any heat treatment. The structure and chemical composition of the specimens were systematically investigated. Laser ablation at low Ar pressure (<50Pa) led to deposition of smooth Ga-rich films, which is independent with laser energy. Under same pressures, as laser energy increased, the film stoichiometry changed from Ga-rich to near stoichiometric composition. Varying background Ar pressure strongly affected the product structure showing little effect on the chemical composition. Under higher pressure than 100 Pa, fine nanoparticles with a size of 5 nm rather than films were deposited on substrate due to the increased collision by plume confining. The optical band-gap of the deposited a-GaN is 2.8 eV for thin films and 3.9 eV for nanoparticles.

You might also be interested in these eBooks
The Science of Engineering Ceramics III View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 317-318)

Pages:

585-588

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.317-318.585

Citation:

Cite this paper

Online since:

August 2006

Authors:

Seung Hwan Shim, Naoto Koshizaki, Jong Won Yoon, Kwang Bo Shim

Keywords:

Amorphous, Gallium Nitride (GaN), Nanostructure, Pulsed-Laser Ablation, Thin Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] T. Honda, Y. Inao, K. Konno, K. Mineo, S. Kumabe and H. Kawanishi: Phys. Status Solidi A Vol. 192 (2002), p.461.

DOI: 10.1002/1521-396x(200208)192:2<461::aid-pssa461>3.0.co;2-m

Google Scholar

[2] A.A. Andreev: Phys. Solid. State Vol. 45 (2003), p.419.

Google Scholar

[3] M. Yu and D.A. Drabold: Solid State Commum. Vol. 108 (1998), p.143.

Google Scholar

[4] M.L. Caldwell, P.G. Van Patten, M.E. Kordesch and H.H. Richardson: MRS Internet J. Nitride Semicond. Res. Vol. 6 (2001), p.13.

DOI: 10.1557/s1092578300000259

Google Scholar

[5] K.R. Chen, J.N. Leboeuf, R.F. Wood, D.B. Geohegan, J.M. Donato, C.L. Liu and A.A. Puretzky: J. Vac. Sci. Technol. A Vol. 14 (1996), p.1111.

Google Scholar

[6] H. Exner, A. -M. Reinecke and M. Niether: J. Ceram. Proc. Res., Vol. 3 (2002), p.66.

Google Scholar

[7] Q. Li, T. Sasaki and N. Koshizaki: Appl. Phys. A Vol. 69 (1999), p.115.

Google Scholar

[8] J.W. Yoon, T. Sasaki and N. Koshizaki: Appl. Phys. A Vol. 76 (2002), p.641.

Google Scholar

[9] G. Schön: J. Electron Spectrosc. Relat. Phenom. Vol. 2 (1973), p.75.

Google Scholar

[10] T.J. Jackson and S.B. Palmer: J. Phys. D Appl. Phys. Vol. 27 (1994), p.1581.

Google Scholar