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Electrically Conductive Aluminum Nitride Ceramics Containing In-Situ Synthesized Boron Carbonitride

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Abstract:

Electrically conductive AlN ceramics were fabricated by the addition of a small amount of B4C and sintering aid, and hot-press sintering in a nitrogen atmosphere. The electrical resistivity of AlN ceramics decreased remarkably from 1014 cm to the range of 100 to 102 cm by a minimum of 2.3 wt% of B4C addition. This resistivity decrease was caused by forming three-dimensional networks composed of boron carbonitride (B-C-N) platelets synthesized during sintering. To produce the networks of B-C-N platelets, two-step sintering with a heat-treatment step at 1600°C before the densification step at 2000°C was needed.

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Periodical:

Key Engineering Materials (Volumes 317-318)

Pages:

653-656

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.317-318.653

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Online since:

August 2006

Authors:

Jun Yoshikawa, Yuji Katsuda, Naohito Yamada, Hiroaki Sakai

Keywords:

Aluminum Nitride (AlN), Boron Carbonitride, Electrical Conductivity, Network Structure

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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