Paper Titles
Electrochemical Reduction of AQ27DS in Aqueous Solution
p.1338
Effect of Deposition and Processing Conditions for LaNiO3 Bottom Electrodes on the Properties of Pb(Zr,Ti)O3 Thin Film Capacitors Made by RF Magnetron Sputtering
p.1343
Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Film Capacitors Made by RF Magnetron Sputtering and Heat-Treated by the Bottom Electrode Crystallization Method
p.1348
Optimization of the Fabrication Parameters of PZT 52/48 Thin Films by Pulsed Laser Ablation
p.1353
Characterization of n-Type:ZnO:Al Films Grown by Magnetron Sputtering
p.1358
The Sodium Loss and Transport through the Walls of the Ceramic Discharge Tube of High Pressure Sodium Lamps
p.1363
Stabilisation of CuO Aqueous Suspensions
p.1369
Adsorption of Surfactants on Polymer Surfaces Investigated with a Novel Zeta-Potential Measurement System
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Effect of Oxygen Content on Impedance Spectra of PtRh Electrodes for NOX Sensing Applications
p.1379

Characterization of n-Type:ZnO:Al Films Grown by Magnetron Sputtering

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Abstract:

ZnO is a wide band gap semi-conductor that has attracted tremendous interest for its potential applications in optoelectronic, solar cell, gas detection … In this work, aluminium doped zinc oxide (ZnO:Al) films were deposited by RF magnetron sputtering on glass substrates with different RF power densities of 1.2, 2.5, 3.7 and 4.9 W/cm2. We notice that the films grown at 1.2 W/cm2 were very thin and their physical properties were not precisely determined. The electrical properties of ZnO films were investigated using the impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz. The impedance data, represented by Nyquist diagrams showed that the resistivity of the films changed during the first three months after deposition. The deposited films show good optical transmittance (over 80 %) in the visible and near infrared spectra. The band gap is around 3 eV and decreases with the increasing of the RF power density (from 3.35 to 3.05 eV). The results of this study suggest that the variation of the RF power density used for deposition allow the control of the electrical and optical properties of the films

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Advanced Materials Forum III View Preview

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Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

1358-1362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.1358

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Online since:

May 2006

Authors:

F. Chaabouni, Luís Cadillon Costa, Mohamed Abaab, Jorge Monteiro

Keywords:

RF Power Density, Sputtering, Thin Film, ZnO:Al

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S.H. Keshmiri, M. Rezaee Rokn-Abadi: Thin Solid Films Vol. 382 (2001), p.230.

DOI: 10.1016/s0040-6090(00)01776-4

Google Scholar

[2] Uwe Rau, Marion Schmidt: Thin Solid Films Vol. 387 (2001), p.141.

Google Scholar

[3] L. Znaidi, G.J.A.A. Soler Illia, S. Benyahia, C. Sanchez, A.V. Kanaev: Thin Solid Films Vol. 428 (2003), p.257.

DOI: 10.1016/s0040-6090(02)01219-1

Google Scholar

[4] R.F. Carcia, R.S. McLean, M.H. Reilly, G. Nunes: J. Appl. Phys. Lett. Vol. 82 (2003), p.1117.

Google Scholar

[5] N. Oleynik, M. Adam, et al., J. Cryst. Growth Vol. 248 (2003), p.14.

Google Scholar

[6] Yuantao Zhang, Guotong Du, et al., J. Cryst. Growth Vol. 252 (2003), p.180.

Google Scholar

[7] B.J. Lokhande, P.S. Patil, M.D. Uplane, Materials Letters Vol. 57 (2002), p.573.

Google Scholar

[8] S. A. Studenikin, Nickolay Golego, and Michael Cociveraa: J. Applied Physics Vol. 87(2000), p.2413.

Google Scholar

[9] Chen Shaoqiang, Zhang Jian, Feng Xiao, Wang Xiaohua, Luo laiqiang, Shi Yanling, Xue Qingsong, Wang Chang, Zhu Jianzhong, Zhu Ziqiang : Applied Surface Science Vol. 241 (2005), p.384.

DOI: 10.1016/j.apsusc.2004.07.040

Google Scholar

[10] Jin-Hong Lee, Byung-OK Park: Thin Solid Films Vol. 426 (2003), p.94.

Google Scholar

[11] N. Al-Dahoudi, M.A. Aegerter: J. Sol-Gel Sci. Technol. Vol. 26 (2003), p.693.

Google Scholar

[12] Masashi Matsumura, Renato P. Camata: Thin Solid Films Vol. 476 (2005), p.317.

Google Scholar

[13] Hideaki Agura, Akio Suzuki, Tatsuhiko Matsushita, Takanori Aoki, Masahiro Okuda: Thin Solid Films Vol. 445 (2003), p.263.

DOI: 10.1016/s0040-6090(03)01158-1

Google Scholar

[14] H.W. Lee, S.P. Lau, Y.G. Wang, K.Y. Tse, H.H. Hng, B.K. Tay: J. Crystal Growth Vol. 268 (2004), p.596.

Google Scholar

[15] Su-Shia Lin, Jow-Lay Huang, Ding-Fwu Lii: Surface and Coatings Technology Vol. 176 (2004), p.173.

Google Scholar

[16] Woon-Jo Jeong, Gye-Choon Park: Solar Energy Materials & Solar Cells Vol. 65 (2001), p.37.

Google Scholar

[17] K.C. Park, D.Y. Ma, K.H. Kim: Thin Solid Films Vol. 305 (1997), p.201.

Google Scholar

[18] H. Kima, U, A. Piqueb, J.S. Horwitzb, H. Muratab, Z.H. Kafafib, C.M. Gilmorea, D.B. Chrisey: Thin Solid Films Vol. 377-378 (2000), p.798.

Google Scholar

[19] L.V. Azaroff: Elements of X-ray Crystallography (McGraw-Hill, New York 1968).

Google Scholar

[20] F. Chaabouni, master thesis, Ecole Nationale d'Ingénieurs de Tunis, (2002).

Google Scholar

[21] R. Swanpoel: J. Phys. E Vol. 16 (1983), p.1214.

Google Scholar

[22] S. Zhu, C-H. Su, S.L. Lehoczky, P. Peters, M.A. George: J. Cryst. Growth Vol. 211 (2000), p.106.

Google Scholar