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Phase Separation on GaInAsSb Films for Thermophotovoltaic Devices

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Abstract:

Ga0.81In0.19As0.14Sb0.86 layers were grown on (100)-Te doped GaSb substrates 2º missoriented towards (110), (111)A and (111)B directions by metalorganic vapour deposition (MOVPE) at 540 °C. X-ray reciprocal space maps done in symmetric (224) and asymmetric (115) directions show a super-lattice structure due to the phase separation with a 5 nm period and independent of substrate orientation. The x-ray maps show different stage of relaxation of the films and in same cases an interdiffusion region near the substrate. Despite of the phase separation, channelling experiments with H ions as projectiles showed a good quality of the films. Channelling experiments show that the crystalline quality gets worse with increasing the In and As concentration.

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Advanced Materials Forum III View Preview

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Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

447-451

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.447

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Online since:

May 2006

Authors:

Victoria Corregidor, Nuno Franco, Eduardo Alves, Nuno P. Barradas

Keywords:

III-V Semiconductors, Phase Separation, Thermophotovoltaics Cells, X-Ray Diffraction (XRD)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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