Preparation of Ferroelectric BaTiO3 Films by Electrophoretic Deposition Technique

Ya Lu Ma; Yu Zhang; Hong Long Zhu

doi:10.4028/www.scientific.net/KEM.336-338.87

Paper Titles

Reliability of Ba(Zr_0.1Ti_0.9)O₃ Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application
p.73

Preparation and Characterization of Citrate Sol-Gel Derived Ba(Zr,Ti)O₃ Ceramics with Al₂O₃ Addition
p.76

Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films
p.79

The Effect of Different Doping Methods of Sintering Aids on the Barium Titanate Based X7R Ceramics
p.83

Preparation of Ferroelectric BaTiO₃ Films by Electrophoretic Deposition Technique
p.87

Preparation and Dielectric Properties of the Nb and Co Doped Barium Titanate by Sol-Gel Auto-Ignition Synthesis Process
p.91

Fabrication of (Ba,Sr)TiO₃ Thin Films by Hydrothermal Crystallization of Sol-Gel Precursor
p.95

Dielectric Properties of HGRP BaTiO₃ Based X7R Materials
p.98

Synthesis and Characteristics of Infrared-to-Visible Upconversion Nanoparticles through a Microemulsion System
p.101

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Preparation of Ferroelectric BaTiO₃ Films by Electrophoretic Deposition Technique

Abstract:

Barium titanate ferroelectric films on Pt substrates were fabricated by electrophoretic deposition (EPD) technique. The barium titanate films sintered at different temperature (600°C, 900°C, 1050°C, 1150°C, 1200°C) for 2h, which were prepared via repeated EPD-sintering route 2~3 times were sufficiently dense and had uniform microstructure. The XRD pattern and SEM microphotography have been measured in order to investigate the effects of the final annealing temperature on the phase compositions and microstructure of the film. The experiment results showed that barium titanate films were crystallized into the tetragonal phase at 1050°C and above. The room temperature dielectric constant (ε) and loss tangent (tanδ) at 1kHz were respectively determined for different samples sintered at 600°C, 900°C, 1050°C, 1150°C and 1200°C. Both ε and tanδ showed anomaly peaks at 125°C. The results showed that typical BaTiO3 films sintered at 1050°C having higher dielectric constant (ε=2300) and lower dielectric loss (tanδ=0.02). The room temperature remanant polarization (Pr) and coercive field (EC) were found to be 1.9μC/cm2 and 35kV/cm, respectively.