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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p51 Resistivity Distribution in Undoped 6H-SiC Boules and Wafers   [ 142 K ]
  Authors: Qiang Li, A.Y. Polyakov, Marek Skowronski, E.K. Sanchez, Mark J. Loboda, Mark A. Fanton, Timothy Bogart, Rick D. Gamble, N.B. Smirnov, Yu.N. Makarov
• p55 The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source   [ 369 K ]
  Authors: Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim
• p59 A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC   [ 175 K ]
  Authors: Darren M. Hansen, Gil Yong Chung, Mark J. Loboda
• p63 In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging   [ 318 K ]
  Authors: Didier Chaussende, Peter J. Wellmann, M. Ucar, Michel Pons, Roland Madar
• p67 Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals   [ 1 M ]
  Authors: Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang
• p71 Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding   [ 651 K ]
  Authors: Guy Chichignoud, Laurent Auvray, Elisabeth Blanquet, Mikhail Anikin, Etienne Pernot, Jean Marie Bluet, P. Chaudouet, Michel Mermoux, Catherine Moisson, Fabrice Letertre, Michel Pons, Roland Madar
• p75 Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth   [ 136 K ]
  Authors: Peter J. Wellmann, Ralf Müller, Michel Pons
• p79 Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC   [ 138 K ]
  Authors: Peter J. Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke
• p83 High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design   [ 288 K ]
  Authors: Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin
• p87 Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth   [ 406 K ]
  Authors: Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski