Silicon Carbide and Related Materials 2005
Materials Science Forum Volumes 527 - 529
-
p473
Origin of the Up-Conversion Process in 4H SiC
[
199 K
]
Authors: John W. Steeds, S.A. Furkert, W. Sullivan, Günter Wagner -
p477
A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
[
538 K
]
Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin -
p481
Investigation of the Displacement Threshold of Si in 4H SiC
[
500 K
]
Authors: W. Sullivan, John W. Steeds -
p485
Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
[
140 K
]
Authors: Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, B.G. Svensson, John W. Steeds, W. Sullivan -
p489
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
[
265 K
]
Authors: L. Storasta, Isaho Kamata, Tomonori Nakamura, Hidekazu Tsuchida -
p493
Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
[
100 K
]
Authors: Sung Wook Huh, Joseph J. Sumakeris, A.Y. Polyakov, Marek Skowronski, P.B. Klein, B.V. Shanabrook, Michael J. O'Loughlin -
p497
Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
[
163 K
]
Authors: Sung Wook Huh, A.Y. Polyakov, Hun Jae Chung, Saurav Nigam, Marek Skowronski, E.R. Glaser, W.E. Carlos, Mark A. Fanton, N.B. Smirnov -
p501
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
[
209 K
]
Authors: Katsunori Danno, Tsunenobu Kimoto -
p505
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates
[
156 K
]
Authors: W.C. Mitchel, William D. Mitchell, S.R. Smith, G.R. Landis, A.O. Evwaraye, Z.Q. Fang, David C. Look, J.R. Sizelove -
p509
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
[
473 K
]
Authors: Z.Q. Fang, B. Claflin, David C. Look, L. Polenta, J. Chen, Thomas Anderson, W.C. Mitchel
