Silicon Carbide and Related Materials 2005
Materials Science Forum Volumes 527 - 529
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p91
The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method
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448 K
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Authors: Jae Woo Kim, Soo Hyung Seo, Kwan Mo Kim, Joon Suk Song, Tae Sung Kim, Myung Hwan Oh -
p95
Polytype Control in 6H-SiC Grown via Sublimation Method
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151 K
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Authors: Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xu, Min Hua Jiang -
p99
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
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1 M
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Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar -
p103
Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
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182 K
]
Authors: Mark A. Fanton, Qiang Li, A.Y. Polyakov, R.L. Cavalero, R.G Ray, B.E. Weiland, Marek Skowronski -
p107
SiC HTCVD Simulation Modified by Sublimation Etching
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146 K
]
Authors: Yasuo Kitou, Emi Makino, Kei Ikeda, Masao Nagakubo, Shoichi Onda -
p111
Gas Fed Top-Seeded Solution Growth of Silicon Carbide
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774 K
]
Authors: Didier Chaussende, Michel Pons, Roland Madar -
p115
Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
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1 M
]
Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima -
p119
Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
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701 K
]
Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara, Kazuo Nakajima -
p123
Growth of Cubic Silicon Carbide Crystals from Solution
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175 K
]
Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Pierre Ferret, J. Pesenti, Alain Basset, Antoine Passero, A. Mantzari, E.K. Polychroniadis, Carole Balloud, P. Soares, Jean Camassel -
p129
Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling
[
136 K
]
Authors: Shin Ichi Nishizawa, Michel Pons
