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Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
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Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
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Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
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Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
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‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
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Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
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Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates

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Abstract:

We report on growth of 3C-SiC by sublimation process in vacuum with the aim to ultimately select conditions for single polytype growth of bulk crystals. The 3C polytype occurrence, growth mechanism and structure evolution have been in the focus of the study. To gain understanding of the initial formation of the cubic polytype, growth was performed on various substrates, such as 6H- and 4H-SiC (on-axis and vicinal), as well as freestanding 3C-SiC wafers. The growth configuration used allowed a high growth rate, e.g. up to 200 (m/h, respectively very thick layers. The grown material was studied by means of optical microscopy, AFM and HRTEM. 6H-SiC (0001) Si-face substrates may be a good choice if the 3C nucleation is well controlled, which can be achieved by selecting the initial temperature ramp up and substrate orientation. These growth conditions limit the number of nucleation centers and decrease the defective boundaries.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.283

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Online since:

October 2006

Authors:

Rositza Yakimova, Gholam Reza Yazdi, Nut Sritirawisarn, Mikael Syväjärvi

Keywords:

3C-SiC, Defect, Growth Mechanism, Nucleation, Sublimation Growth

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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