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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p135 Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs   [ 475 K ]
  Authors: Bernd Thomas, Christian Hecht, René A. Stein, Peter Friedrichs
• p141 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices   [ 976 K ]
  Authors: Joseph J. Sumakeris, J.P. Bergman, Mrinal Das, Christer Hallin, Brett A. Hull, Erik Janzén, H. Lendenmann, Michael J. O'Loughlin, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John Palmour, Calvin H. Carter Jr.
• p147 Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers   [ 1 M ]
  Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
• p153 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness   [ 372 K ]
  Authors: Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, H. Tsuge, Masashi Nakabayashi, T. Hoshino, Noboru Ohtani
• p159 SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers   [ 227 K ]
  Authors: A.A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure
• p163 Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process   [ 168 K ]
  Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F. Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa
• p167 Lower-Temperature Epitaxial Growth of 4H-SiC Using CH₃Cl Carbon Gas Precursor   [ 199 K ]
  Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuk, Colin Wood
• p171 Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH₃Cl Carbon Precursor   [ 336 K ]
  Authors: Huang De Lin, Jeffery L. Wyatt, Yaroslav Koshka
• p175 Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor   [ 1 M ]
  Authors: Mike F. MacMillan, Mark J. Loboda, Gil Yong Chung, E.P. Carlson, Jian Wei Wan
• p179 SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor   [ 484 K ]
  Authors: Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via