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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p1277 High Power-Density 4H-SiC RF MOSFETs   [ 136 K ]
  Authors: G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar O. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos
• p1281 4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET   [ 214 K ]
  Authors: Shinsuke Harada, Makoto Kato, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai
• p1285 Fabrication and Performance of 1.2 kV, 12.9 mΩcm² 4H-SiC Epilayer Channel MOSFET   [ 145 K ]
  Authors: Yoichiro Tarui, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Yukiyasu Nakao, Masayuki Imaizumi, Hiroaki Sumitani, Tetsuya Takami, Tatsuo Ozeki, Tatsuo Oomori
• p1289 Switching Characteristics of SiC-MOSFET and SBD Power Modules   [ 289 K ]
  Authors: Masayuki Imaizumi, Yoichiro Tarui, Shin-Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, Tatsuo Ozeki
• p1293 Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls   [ 16 M ]
  Authors: H. Nakao, Hideno Mikami, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
• p1297 The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates   [ 315 K ]
  Authors: Hiroyuki Fujisawa, Takashi Tsuji, Masaharu Nishiura
• p1301 Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility   [ 260 K ]
  Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda
• p1305 Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs   [ 182 K ]
  Authors: Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto
• p1309 Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400ºC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace   [ 196 K ]
  Authors: Ryouji Kosugi, Kenji Suzuki, Kazuto Takao, Yusuke Hayashi, Tsutomu Yatsuo, Kenji Fukuda, Hiromichi Ohashi, Kazuo Arai
• p1313 A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices   [ 583 K ]
  Authors: Sumi Krishnaswami, Sei Hyung Ryu, Bradley Heath, Anant Agarwal, John Palmour, Bruce Geil, Aivars J. Lelis, Charles J. Scozzie