Silicon Carbide and Related Materials 2005
Materials Science Forum Volumes 527 - 529
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p1401
Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
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222 K
]
Authors: Lin Zhu, T.P. Chow -
p1405
Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
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16 M
]
Authors: Qing Chun Zhang, Sei Hyung Ryu, Charlotte Jonas, Anant Agarwal, John Palmour -
p1409
Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
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394 K
]
Authors: Anant Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei Hyung Ryu, John Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie, Robert E. Stahlbush -
p1413
First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
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618 K
]
Authors: Anant Agarwal, Fatima Husna, Jeremy Haley, Howard Bartlow, Bill McCalpin, Sumi Krishnaswami, Craig Capell, Sei Hyung Ryu, John Palmour -
p1417
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
[
868 K
]
Authors: Jian Hui Zhang, Jian Wu, Petre Alexandrov, Terry Burke, Kuang Sheng, Jian H. Zhao -
p1421
4H-SiC Bipolar Transistors with UHF and L-Band Operation
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146 K
]
Authors: Ivan Perez-Wurfl, Feng Zhao, Chih Fang Huang, John Torvik, Bart Van Zeghbroeck -
p1425
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
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152 K
]
Authors: Martin Domeij, Hyung Seok Lee, C.M. Zetterling, Mikael Östling, Adolf Schöner -
p1429
Optimization of the Specific On-Resistance of 4H-SiC BJTs
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262 K
]
Authors: S. Balachandran, T.P. Chow, Anant Agarwal -
p1433
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
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84 K
]
Authors: S. Balachandran, T.P. Chow, Anant Agarwal -
p1437
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
[
188 K
]
Authors: Sumi Krishnaswami, Anant Agarwal, James Richmond, Craig Capell, Sei Hyung Ryu, John Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie
