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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p1441 Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs   [ 198 K ]
  Authors: Pavel A. Ivanov, Michael E. Levinshtein, Anant Agarwal, Sumi Krishnaswami, John Palmour
• p1445 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature   [ 87 K ]
  Authors: James Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant Agarwal, John Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie
• p1449 Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices   [ 207 K ]
  Authors: Yang Sui, Ginger G. Walden, Xiao Kun Wang, James A. Cooper
• p1453 Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)   [ 307 K ]
  Authors: Tetsuya Hayashi, Yoshio Shimoida, Hideaki Tanaka, Shigeharu Yamagami, Satoshi Tanimoto, Masakatsu Hoshi
• p1457 SiC-Based MOSFETs for Harsh Environment Emissions Sensors   [ 61 K ]
  Authors: Peter Sandvik, Majdeddin Ali, Vinayak Tilak, Kevin Matocha, Thomas Stauden, Jesse B. Tucker, John Deluca, Oliver Ambacher
• p1461 Development of Ultra High Sensitivity UV Silicon Carbide Detectors   [ 342 K ]
  Authors: Feng Yan, Xiao Bin Xin, Petre Alexandrov, Carl M Stahle, Bing Guan, Jian H. Zhao
• p1465 Silicon Carbide Power Diodes as Radiation Detectors   [ 1 M ]
  Authors: Bernard F. Phlips, Karl D. Hobart, Francis J. Kub, Robert E. Stahlbush, Mrinal K. Das, Gianluigi De Geronimo, Paul O' Connor
• p1469 Minimum Ionizing Particle Detector Based on p⁺n Junction SiC Diode   [ 174 K ]
  Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Silvio Sciortino, Günter Wagner, Roberta Nipoti
• p1473 Radiation Hard Devices Based on SiC   [ 1004 K ]
  Authors: Evgenia Kalinina, Anatoly M. Strel'chuk, A.A. Lebedev, Nikita B. Strokan, Alexandr M. Ivanov, G. Kholuyanov
• p1477 The Limit of SiC Detector Energy Resolution in Ion Spectometry   [ 176 K ]
  Authors: Rositza Yakimova, A.A. Lebedev, Alexandr M. Ivanov, Nikita B. Strokan, Mikael Syväjärvi