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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p1483 Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC   [ 366 K ]
  Authors: Charles R. Eddy Jr., N.D. Bassim, M.A. Mastro, R.L. Henry, M.E. Twigg, Ronald T. Holm, J.C Culbertson, Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek
• p1489 Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates   [ 332 K ]
  Authors: D.J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, Hiroyuki Nagasawa, Masayuki Abe
• p1493 Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition   [ 300 K ]
  Authors: Mitsuaki Shimizu, Hiroshi Chonan, Guaxi Piao, Hajime Okumura, Hisayuki Nakanishi
• p1497 The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates   [ 319 K ]
  Authors: Z. Gu, J.H. Edgar, Balaji Raghothamachar, Michael Dudley, Dejin Zhuang, Zlatko Sitar
• p1501 Growth of AlN and AlN-SiC Solid Solution by Sublimation Method   [ 414 K ]
  Authors: Mikhail Anikin, Didier Chaussende, Etienne Pernot, O. Chaix-Pluchery, H. Roussel, Michel Pons, Roland Madar
• p1505 Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates   [ 335 K ]
  Authors: Ü Özgür, Cole W. Litton, Y. Fu, Y.T. Moon, F. Yun, H.O. Everitt, Hadis Morkoç
• p1509 Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC   [ 690 K ]
  Authors: N.D. Bassim, M.E. Twigg, M.A. Mastro, Philip G. Neudeck, Charles R. Eddy Jr., R.L. Henry, R.N. Holm, J. Anthony Powell, Andrew J. Trunek
• p1513 Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates   [ 1 M ]
  Authors: J. Bai, X. Huang, Balaji Raghothamachar, Michael Dudley, B. Wagner, Robert F. Davis, L. Wu, Y. Zhu
• p1517 Anisotropic Properties of GaN Studied by Raman Scattering   [ 211 K ]
  Authors: H.C. Lin, Zhe Chuan Feng, Ming Song Chen, Z.X. Shen, Wei Jie Lu, W.E. Collins
• p1521 Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates   [ 1 M ]
  Authors: Balaji Raghothamachar, Rafael Dalmau, Michael Dudley, Raoul Schlesser, Dejin Zhuang, Ziad Herro, Zlatko Sitar