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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p223 Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition   [ 425 K ]
  Authors: Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto
• p227 Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC   [ 875 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, G.Reza Yazdi, Arul Arjunan, Eugene Toupitsyn, T.S. Sudarshan
• p231 Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy   [ 2 M ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Koji Nakayama, R. Ishii, Yoshitaka Sugawara
• p235 Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface   [ 242 K ]
  Authors: Hiroki Yamaguchi, Yukinori Sakiyama, Emi Makino, Shoichi Onda, Yoichiro Matsumoto
• p239 Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV   [ 1 M ]
  Authors: Christian Hecht, Bernd Thomas, Wolfgang Bartsch
• p243 Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers   [ 4 M ]
  Authors: Ze Hong Zhang, T.S. Sudarshan
• p247 Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers   [ 1 M ]
  Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry
• p251 SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology   [ 261 K ]
  Authors: Yuuichi Takeuchi, M. Kataoka, Tsunenobu Kimoto, Hiroyuki Matsunami, Rajesh Kumar Malhan
• p255 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates   [ 1 M ]
  Authors: Y. Shishkin, Yue Ke, Fei Yan, R. P. Devaty, W.J. Choyke, S.E. Saddow
• p259 Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask   [ 661 K ]
  Authors: Can Hua Li, I. Bhat, T.P. Chow