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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p303 Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor   [ 2 M ]
  Authors: Aparna Gupta, Chacko Jacob
• p307 Growth of 3C-SiC on Si Molds for MEMS Applications   [ 3 M ]
  Authors: M. Reyes, M. Waits, S. Harvey, Y. Shishkin, Bruce Geil, J.T. Wolan, S.E. Saddow
• p311 Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition   [ 435 K ]
  Authors: Xiao An Fu, Jacob Trevino, M. Mehregany, Christian A. Zorman
• p315 Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures   [ 1003 K ]
  Authors: Alexander A. Schmidt, Yu.V. Trushin, K.L. Safonov, V.S. Kharlamov, Dmitri V. Kulikov, Oliver Ambacher, Jörg Pezoldt
• p321 Theory of Dislocations in SiC: The Effect of Charge on Kink Migration   [ 218 K ]
  Authors: T.A.G. Eberlein, R. Jones, A.T. Blumenau
• p327 Structure of Carrot Defects in 4H-SiC Epilayers   [ 5 M ]
  Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
• p333 Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy   [ 448 K ]
  Authors: Shinichi Nakashima, Takeshi Mitani
• p339 Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy   [ 160 K ]
  Authors: Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Takeshi Mitani, Shinichi Nakashima
• p343 Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals   [ 3 M ]
  Authors: Takeshi Mitani, Shinichi Nakashima, Hajime Okumura, Hiroyuki Nagasawa
• p347 Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC   [ 152 K ]
  Authors: Orest J. Glembocki, Marek Skowronski, S.M. Prokes, D. Kurt Gaskill, Joshua D. Caldwell