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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p351 Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes   [ 161 K ]
  Authors: M.S. Miao, Walter R.L. Lambrecht
• p355 Silicon Carbide: A Playground for 1D-Modulation Electronics   [ 653 K ]
  Authors: Peter Deák, Adam Buruzs, A. Gali, Thomas Frauenheim, W.J. Choyke
• p359 Peierls Barriers and Core Properties of Partial Dislocations in SiC   [ 475 K ]
  Authors: G. Savini, M.I. Heggie, Sven Öberg
• p363 Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes   [ 625 K ]
  Authors: Y. Wang, L. Chen, M.K. Mikhov, G. Samson, B.J. Skromme
• p367 Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes   [ 189 K ]
  Authors: S.I. Maximenko, P. Pirouz, T.S. Sudarshan
• p371 Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers   [ 453 K ]
  Authors: Ze Hong Zhang, A.E. Grekov, Priyamvada Sadagopan, S.I. Maximenko, T.S. Sudarshan
• p375 Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping   [ 156 K ]
  Authors: Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tomonori Nakamura, R. Ishii, Koji Nakayama, Yoshitaka Sugawara
• p379 Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction   [ 1 M ]
  Authors: Maryse Lancin, G. Regula, J. Douin, Hosni Idrissi, Laurent Ottaviani, Bernard Pichaud
• p383 Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes   [ 247 K ]
  Authors: M.E. Twigg, Robert E. Stahlbush, P.A. Losee, Can Hua Li, I. Bhat, T.P. Chow
• p387 Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures   [ 153 K ]
  Authors: Kendrick X. Liu, Robert E. Stahlbush, Karl D. Hobart, Joseph J. Sumakeris