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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p391 Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method   [ 2 M ]
  Authors: Nicolas Camara, K. Zekentes, Edwige Bano, Aurelie Thuaire, A.A. Lebedev
• p395 Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface   [ 884 K ]
  Authors: Augustinas Galeckas, Anders Hallén, Adolf Schöner, Jan Linnros, P. Pirouz
• p399 Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films   [ 340 K ]
  Authors: Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto
• p403 Structure of “Star” Defect in 4H-SiC Substrates and Epilayers   [ 1 M ]
  Authors: Jae Won Lee, Marek Skowronski
• p407 Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal   [ 742 K ]
  Authors: Satoshi Yamaguchi, Daisuke Nakamura, Itaru Gunjishima, Yoshiharu Hirose
• p411 Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers   [ 370 K ]
  Authors: William M. Vetter, Hidekazu Tsuchida, Isaho Kamata, Michael Dudley
• p415 Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers   [ 314 K ]
  Authors: Isaho Kamata, Hidekazu Tsuchida, Toshiyuki Miyanagi, Tomonori Nakamura
• p419 Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?   [ 947 K ]
  Authors: Ze Hong Zhang, A. Shrivastava, T.S. Sudarshan
• p423 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method   [ 306 K ]
  Authors: Y. Yanagisawa, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
• p427 Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs   [ 686 K ]
  Authors: Stanislav Soloviev, Peter Sandvik, Steve Arthur, Kevin Matocha, S.I. Maximenko, T.S. Sudarshan