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Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization
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Behavior of Oxide Film in Transient-Liquid-Phase Bonding of Tin with Filler of Bismuth Film
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Microstructure and Gas Sensing Property of Porous SnO2 Sputtered Films
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Luminance Characterization of La3Ga5SiO14 Thin Films by Sputtering Deposition
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Effect of Film Thickness and Annealing Temperature in Stress-Induced Damage in Metal Films
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Microstructure and Gas Sensing Property of Porous SnO2 Sputtered Films

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Abstract:

It is often said that the sensitivity of a gas sensor made of an oxide semiconductor film is enhanced by making the film porous. However, the porosity of sensor films has not been sufficiently examined. In this study, SnO2 films were deposited using DC magnetron sputtering under various substrate temperatures and discharge gas pressures. In addition to the structural analysis by means of X-ray diffraction and scanning electron microscopy, the density and the BET surface area were measured to clarify the film porosity. The sensitivity to H2 gas of undoped and Pd-doped SnO2 films upon exposure to 1000 ppm H2 was measured at 300 . SnO2 films generally showed a columnar structure. The film deposited at a low temperature and a high pressure showed a low density and a large effective surface area. The H2 sensitivity increased as the density decreased, that is, as the effective surface area increased.

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Periodical:

Materials Science Forum (Volumes 539-543)

Pages:

3508-3513

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.539-543.3508

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Online since:

March 2007

Authors:

Toshinari Yamazaki, Cheng Ji Jin, Yan Bai Shen, Toshio Kikuta, Noriyuki Nakatani

Keywords:

BET Method, Hydrogen, Paradium, Porosity, Sputtering, Surface Area, TiN Oxide

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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