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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p423 Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy   [ 747 K ]
  Authors: Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
• p427 Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure   [ 174 K ]
  Authors: Anatoly M. Strel'chuk, A.A. Lebedev, N.S. Savkina, A.N. Kuznetsov
• p431 The Premature Breakdown in 6H-SiC p-n Junction   [ 157 K ]
  Authors: V.I. Sankin, A.M. Monakhov, P.P. Shkrebiy
• p435 Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide   [ 240 K ]
  Authors: I.G. Ivanov, Erik Janzén
• p439 Point Defects and their Aggregation in Silicon Carbide   [ 1 M ]
  Authors: A. Gali, T. Hornos, M. Bockstedte, Thomas Frauenheim
• p445 A Theoretical Study on Aluminium-Related Defects in SiC   [ 556 K ]
  Authors: T. Hornos, A. Gali, N.T. Son, Erik Janzén
• p449 Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC   [ 184 K ]
  Authors: P. Carlsson, N.T. Son, T. Umeda, J. Isoya, Erik Janzén
• p453 Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC   [ 314 K ]
  Authors: T. Umeda, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, J. Isoya
• p457 Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis   [ 131 K ]
  Authors: Takeshi Ohshima, O. Tokunaga, Masahiko Issiki, Fumio Sasajima, Hisayoshi Itoh
• p461 Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC   [ 403 K ]
  Authors: Ioana Pintilie, K. Irmscher, Ulrike Grossner, B.G. Svensson, Bernd Thomas