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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

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Abstract:

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

1007-1010

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.1007

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Online since:

September 2007

Authors:

Christophe Raynaud, Daniel Loup, Philippe Godignon, Raul Perez Rodriguez, Dominique Tournier, Dominique Planson

Keywords:

Bipolar Diode, Breakdown Voltage, Edge Termination, OBIC

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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