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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p465 Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation   [ 232 K ]
  Authors: N.T. Son, P. Carlsson, Bjorn Magnusson, Erik Janzén
• p469 New Insight in Scandium-Mediated Growth Techniques: Sc-Related Defects in 4H-SiC and 6H-SiC   [ 365 K ]
  Authors: U. Gerstmann, S. Greulich-Weber, E. Rauls, Johann Martin Spaeth, E.N. Kalabukhova, E.N. Mokhov, Francesco Mauri
• p473 Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition   [ 162 K ]
  Authors: Mary Ellen Zvanut, Hun Jae Chung, A.Y. Polyakov, Marek Skowronski
• p477 SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts   [ 479 K ]
  Authors: Hervé Peyre, Nada Habka, Veronique Soulière, Maher Soueidan, Gabriel Ferro, Yves Monteil, Jean Camassel
• p481 Atomic Crack Defects Developing at Silicon Carbide Surfaces Studied by STM, Synchrotron Radiation-Based μ-spot XPS and LEEM   [ 595 K ]
  Authors: P. Soukiassian, F. Amy, C. Brylinski, T.O. Mentes, A. Locatelli
• p487 Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps   [ 206 K ]
  Authors: Einar O. Sveinbjörnsson, Fredrik Allerstam, H.Ö. Ólafsson, G. Gudjónsson, D. Dochev, T. Rödle, R. Jos
• p493 Ab Initio Study of Clean and Hydrogen-Saturated Unreconstructed SiC{0001} Surfaces   [ 551 K ]
  Authors: Alexander Mattausch, T. Dannecker, Oleg Pankratov
• p497 An Approach to Model Temperature Effects of Interface Traps in 4H-SiC   [ 399 K ]
  Authors: Ramakrishna Rao, S. Balaji, Kevin Matocha, Vinayak Tilak
• p501 Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO₂/4H-SiC   [ 193 K ]
  Authors: Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas
• p505 Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism   [ 1 M ]
  Authors: Kin Kiong Lee, Gerhard Pensl, Maher Soueidan, Gabriel Ferro