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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p509 Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO₂ and 4H-SiC/SiO₂ Interfaces for MOS Devices   [ 164 K ]
  Authors: O.J. Guy, T.E. Jenkins, M. Lodzinski, A. Castaing, S.P. Wilks, P. Bailey, T.C.Q. Noakes
• p513 Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor   [ 368 K ]
  Authors: Kok Keong Lew, Brenda L. Van Mil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy Jr., D. Kurt Gaskill
• p517 Formation of Deep Traps at the 4H-SiC/SiO₂ Interface when Utilizing Sodium Enhanced Oxidation   [ 215 K ]
  Authors: Fredrik Allerstam, G. Gudjónsson, Einar O. Sveinbjörnsson, T. Rödle, R. Jos
• p521 Generation of Amorphous SiO₂/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation   [ 416 K ]
  Authors: Atsumi Miyashita, Toshiharu Ohnuma, Misako Iwasawa, Hidekazu Tsuchida, Masahito Yoshikawa
• p525 Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy   [ 3 M ]
  Authors: Konstantin V. Emtsev, Thomas Seyller, F. Speck, Lothar Ley, P. Stojanov, J.D. Riley, R.C.G. Leckey
• p529 Nanowire Reconstruction on the 4H-SiC(1102) Surface   [ 3 M ]
  Authors: M. Hetzel, Charíya Virojanadara, W.J. Choyke, Ulrich Starke
• p533 Structure of the 3C-SiC(100) 5x2 Surface Reconstruction Investigated by Synchrotron Radiation Based Grazing Incidence X-Ray Diffraction   [ 230 K ]
  Authors: M. Silly, H. Enriquez, J. Roy, M. D'Angelo, P. Soukiassian, T. Schuelli, M. Noblet, G. Renaud
• p537 The Al₂O₃/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique   [ 591 K ]
  Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Helmer Fjellvåg, B.G. Svensson
• p541 The Mechanism of Interface State Passivation by NO   [ 167 K ]
  Authors: Peter Deák, T. Hornos, Christoph Thill, Jan Knaup, A. Gali, Thomas Frauenheim
• p545 Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy   [ 793 K ]
  Authors: Filippo Giannazzo, Fabrizio Roccaforte, S.F. Liotta, Vito Raineri