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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p549 XPS Study of the Electronic Properties of the Ce/4H-SiC Interface, and the Formation of the SiO₂/Ce₂Si₂O₇/4H-SiC Interface Structure upon Oxidation   [ 336 K ]
  Authors: Morten Kildemo, Ulrike Grossner, B.G. Svensson, S. Raaen
• p555 Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum   [ 359 K ]
  Authors: Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valery V. Afanas'ev
• p561 Post-Implantation Annealing of SiC: Relevance of the Heating Rate   [ 323 K ]
  Authors: Roberta Nipoti
• p567 Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing   [ 364 K ]
  Authors: Y. Wang, P.A. Losee, S. Balachandran, I. Bhat, T.P. Chow, Y. Wang, B.J. Skromme, J.K. Kim, E.F. Schubert
• p571 Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process   [ 202 K ]
  Authors: Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti
• p575 Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC   [ 1 M ]
  Authors: Kenneth A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, Michael A. Derenge, A. Bolonikov, Tangali S. Sudarshan, R.D. Vispute, Shiva S. Hullavarad, S. Dhar
• p579 Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate   [ 238 K ]
  Authors: Etsushi Taguchi, Yu Suzuki, Masataka Satoh
• p583 Encapsulating Annealing of N⁺ Implanted 4H-SiC by Diamond-Like-Carbon Film   [ 578 K ]
  Authors: Shingo Miyagawa, Tomoyuki Suzuki, Takahiro Kudo, Masataka Satoh
• p587 High Temperature Implantation of Aluminum in 4H Silicon Carbide   [ 77 K ]
  Authors: Martin Rambach, Anton J. Bauer, H. Ryssel
• p591 Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC   [ 501 K ]
  Authors: Giovanni Alfieri, Tsunenobu Kimoto