Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Materials Science & Technology

HOME CONTACT

NEW: Advanced Search

MSF

>

Materials Science Forum

KEM

>

Key Engineering Materials

SSP

>

Solid State Phenomena

DDF

>

Defect and Diffusion Forum

AMM

>

Applied Mechanics and Materials

AMR

>

Advanced Materials Research

AST

>

Advances in Science and Technology

JNanoR

>

Journal of Nano Research

JBBTE

>

Journal of Biomimetics, Biomaterials, and Tissue Engineering

JMNM

>

Journal of Metastable and Nanocrystalline Materials

> @scientific.net

CONFERENCE

10/18/2009 - 10/19/2009

APCCC-15: 15. Asian-Pacific corrosion control conference

6/28/2009 - 7/3/2009

ICMAT 5

4/6/2009 - 4/8/2009

SheMet 2009

more...

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Get the full paper by clicking here