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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p595 Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics   [ 707 K ]
  Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Seong Jin Kim, Sang Cheol Kim, Sung Jae Joo, Nam Kyun Kim
• p599 Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with ³⁰Si Isotope: Electron Paramagnetic Resonance Study   [ 536 K ]
  Authors: I.V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
• p603 Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation   [ 234 K ]
  Authors: L. Storasta, Hidekazu Tsuchida
• p607 Selenium and Tellurium Double Donors in SiC   [ 293 K ]
  Authors: Sergey A. Reshanov, Heiko B. Weber, Gerhard Pensl, Adolf Schöner, Hiroyuki Nagasawa
• p611 Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC   [ 606 K ]
  Authors: Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremillieu, Jean Louis Leclercq, Jacques Dazord, Dominique Planson
• p615 Dynamical Simulation of SiO₂/4H-SiC(0001) Interface Oxidation Process: from First-Principles   [ 886 K ]
  Authors: Toshiharu Ohnuma, Atsumi Miyashita, Misako Iwasawa, Masahito Yoshikawa, Hidekazu Tsuchida
• p621 Trap Assisted Gas Sensing Mechanism in MISiC Capacitors   [ 196 K ]
  Authors: A.B. Horsfall, Ming Hung Weng, Rajat Mahapatra, Nicolas G. Wright
• p627 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃   [ 213 K ]
  Authors: Svetlana Beljakowa, Thomas Frank, Gerhard Pensl, Kun Yuan Gao, F. Speck, Thomas Seyller
• p631 A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain   [ 270 K ]
  Authors: Hyung Seok Lee, Martin Domeij, C.M. Zetterling, Mikael Östling, Einar O. Sveinbjörnsson
• p635 Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers   [ 169 K ]
  Authors: Junji Senzaki, Atsushi Shimozato, Kenji Fukuda