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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p639 Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose   [ 238 K ]
  Authors: Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti
• p643 Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)   [ 182 K ]
  Authors: Jeong Hyun Moon, Kuan Yew Cheong, Da Il Eom, Ho Keun Song, Jeong Hyuk Yim, Jong Ho Lee, Hoon Joo Na, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim
• p647 Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y   [ 186 K ]
  Authors: Jeong Hyun Moon, Dong Hwan Kim, Ho Keun Song, Jeong Hyuk Yim, Wook Bahng, Nam Kyun Kim, Kwang Seok Seo, Hyeong Joon Kim
• p651 Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation   [ 91 K ]
  Authors: Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti
• p655 Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application   [ 613 K ]
  Authors: Andreas Fissel, M. Czernohorsky, R. Dagris, H.J. Osten
• p659 Interface Properties of SiO₂/4H-SiC(0001) with Large Off-Angles Formed by N₂O Oxidation   [ 219 K ]
  Authors: Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto
• p663 Modification of SiO₂/4H-SiC Interface Properties by High-Pressure H₂O Vapor Annealing   [ 188 K ]
  Authors: D. Takeda, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
• p667 Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices   [ 278 K ]
  Authors: Mrinal K. Das, Sarah K. Haney, Charlotte Jonas, Qing Chun Zhang, Sei Hyung Ryu
• p671 Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices   [ 1 M ]
  Authors: Sombel Diaham, Marie-Laure Locatelli, Thierry Lebey
• p675 Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC   [ 188 K ]
  Authors: Kevin Matocha, Richard Beaupre