Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
doi:10.4028/0-87849-442-1
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p679
Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC
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164 K
]
Authors: Ming Hung Weng, Rajat Mahapatra, A.B. Horsfall, Nicolas G. Wright, Paul G. Coleman, C.P. Burrows
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p683
X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
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716 K
]
Authors: Ulrike Grossner, Marco Servidori, Marc Avice, Ola Nilsen, Helmer Fjellvåg, Roberta Nipoti, B.G. Svensson
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p687
A Case for High Temperature, High Voltage SiC Bipolar Devices
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441 K
]
Authors: Anant Agarwal
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p693
Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
[
770 K
]
Authors: Alexander Mattausch, Oleg Pankratov
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p697
Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
[
359 K
]
Authors: M.R. Jennings, A. Pérez-Tomás, D. Walker, Lin Zhu, P.A. Losee, W. Huang, S. Balachandran, O.J. Guy, J.A. Covington, T.P. Chow, P.A. Mawby
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p701
Electronic Structure of Graphite/6H-SiC Interfaces
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171 K
]
Authors: Thomas Seyller, Konstantin V. Emtsev, F. Speck, Kun Yuan Gao, Lothar Ley
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p705
Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
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234 K
]
Authors: Yu Suzuki, Etsushi Taguchi, Shouhei Nagata, Masataka Satoh
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p709
High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application
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1 M
]
Authors: Cyril Buttay, C. Mark Johnson, Jeremy Rashid, F. Udrea, G. Amaratunga, Peter Tappin, Nicolas G. Wright, Peter Ireland, Takeo Yamamoto, Yuuichi Takeuchi, Rajesh Kumar Malhan
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p713
Interface Reactions and Electrical Properties of Ta/4H-SiC Contacts
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186 K
]
Authors: Yu Cao, S. Alfonso Pérez-García, Lars Nyborg
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p717
Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes
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360 K
]
Authors: Tae Hong Kim, Seung Yong Lee, Jang Sub Lee, Duk Il Suh, Nam Kyu Cho, Wook Bahng, Nam Kyun Kim, Sung Yong Choi, Hak Jong Kim, Sang Kwon Lee