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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p803 Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate   [ 153 K ]
  Authors: S. Katakami, Makoto Ogata, Shuichi Ono, Manabu Arai
• p807 Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates   [ 16 M ]
  Authors: Hiroshi Yano, H. Nakao, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
• p811 Investigation of Drain Current Saturation in 4H-SiC MOSFETs   [ 281 K ]
  Authors: Gary Pennington, S. Potbhare, Neil Goldsman, D.B. Habersat, Aivars J. Lelis, J.M. McGarrity, C.R. Ashman
• p815 Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure   [ 165 K ]
  Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
• p819 Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm² Specific On-Resistance   [ 468 K ]
  Authors: Kevin Matocha, Jesse Tucker, Steve Arthur, Michael Schutten, Jeff Nasadoski, John Glaser, Ljubisa Stevanovic
• p823 Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations   [ 328 K ]
  Authors: In Ho Kang, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, Nam Kyun Kim
• p827 Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body   [ 177 K ]
  Authors: Keiko Fujihira, Naruhisa Miura, Tomokatsu Watanabe, Yukiyasu Nakao, Naoki Yutani, Ken Ichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Oomori
• p831 SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C   [ 529 K ]
  Authors: Philip G. Neudeck, David J. Spry, Liang Yu Chen, Robert S. Okojie, Glenn M. Beheim, Roger Meredith, Terry L. Ferrier
• p835 SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps   [ 267 K ]
  Authors: A. Pérez-Tomás, M.R. Jennings, P.A. Mawby, J.A. Covington, Phillippe Godignon, José Millán, Narcis Mestres
• p839 Simulation Study of High-k Materials for SiC Trench MOSFETs   [ 177 K ]
  Authors: Peter Tappin, Rajat Mahapatra, Nicolas G. Wright, Praneet Bhatnagar, A.B. Horsfall