HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p93 Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route   [ 304 K ]
  Authors: Maurizio Masi, Alessandro Veneroni, A. Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, G. Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa
• p97 Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers   [ 568 K ]
  Authors: Henke Pedersen, Anne Henry, Jawul Hassan, J.P. Bergman, Erik Janzén
• p101 High Quality Uniform SiC Epitaxy for Power Device Applications   [ 223 K ]
  Authors: Jie Zhang, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, Michael S. Mazzola
• p105 High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism   [ 741 K ]
  Authors: N. Boutarek, Didier Chaussende, Roland Madar
• p109 Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection   [ 2 M ]
  Authors: Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li
• p113 Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors   [ 850 K ]
  Authors: Ho Keun Song, Han Seok Seo, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, Sun Young Kwon, Hoon Joo Na, Hyeong Joon Kim
• p117 Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers   [ 2 M ]
  Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry
• p121 In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition   [ 746 K ]
  Authors: Brian H. Ponczak, James D. Oliver, Soon Cho, Gary W. Rubloff
• p125 In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD   [ 140 K ]
  Authors: Brenda L. Van Mil, Kok Keong Lew, Rachael L. Myers-Ward, Ronald T. Holm, D. Kurt Gaskill, Charles R. Eddy Jr.
• p129 Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate   [ 477 K ]
  Authors: T. Hori, Katsunori Danno, Tsunenobu Kimoto