HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p843 Temperature Stability of Heteropolytypic 6H/3C FETs   [ 198 K ]
  Authors: Chia Ching Chen, A.B. Horsfall, Nicolas G. Wright, Konstantin V. Vassilevski
• p847 Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs   [ 161 K ]
  Authors: S. Potbhare, Neil Goldsman, Gary Pennington, Aivars J. Lelis, J.M. McGarrity
• p851 Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure   [ 368 K ]
  Authors: Gerald Soelkner, Winfried Kaindl, Michael Treu, Dethard Peters
• p857 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination   [ 234 K ]
  Authors: Tsuyoshi Yamamoto, Takeshi Endo, Nobuyuki Kato, Hiroki Nakamura, Toshio Sakakibara
• p861 Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination   [ 223 K ]
  Authors: S.J. Kim, Y.S. Choi, S.J. Yu, Sang Cheol Kim, Wook Bahng, K.H. Lee
• p865 Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond   [ 550 K ]
  Authors: G. Brezeanu, M. Brezeanu, F. Udrea, G. Amaratunga, C. Boianceanu, M. Badila, K. Zekentes, Adi Visoreanu
• p869 FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD   [ 262 K ]
  Authors: S.J. Kim, S. Kim, Sang Cheol Kim, In Ho Kang, K.H. Lee, T. Matsuoka
• p873 High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension   [ 268 K ]
  Authors: Konstantin V. Vassilevski, I. Nikitina, A.B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
• p877 Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing   [ 170 K ]
  Authors: Akimasa Kinoshita, Takashi Nishi, Tsutomu Yatsuo, Kenji Fukuda
• p881 Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)   [ 915 K ]
  Authors: Chiharu Ota, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, Hiromichi Ohashi