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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p885 The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes   [ 380 K ]
  Authors: Shin Harada, Yasuo Namikawa
• p889 Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects   [ 788 K ]
  Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga
• p895 Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications   [ 310 K ]
  Authors: Brett A. Hull, Joseph J. Sumakeris, Mrinal K. Das, James Richmond, John Palmour
• p901 1.2 kV Pin Diodes with SiCrystal Epiwafer   [ 551 K ]
  Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, S. Scharnholz, Dominique Planson, Jean-Pierre Chante
• p905 Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation   [ 1019 K ]
  Authors: D. Werber, P. Borthen, G. Wachutka
• p909 Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes   [ 722 K ]
  Authors: Aurelie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, K. Zekentes
• p913 Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions   [ 155 K ]
  Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Shigeomi Hishiki, Toshio Hirao, Toshio Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, Günter Wagner, Hisayoshi Itoh
• p917 Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes   [ 257 K ]
  Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti
• p921 Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process   [ 220 K ]
  Authors: Pavel A. Ivanov, Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John Palmour, Mrinal K. Das, Brett A. Hull
• p925 Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs   [ 196 K ]
  Authors: Andrej Mihaila, F. Udrea, S.J. Rashid, G. Amaratunga, Mitsuhiro Kataoka, Yuuichi Takeuchi, Rajesh Kumar Malhan