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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p929 Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS   [ 251 K ]
  Authors: Akihiro Egami, Masami Shibagaki, Akira Kumagai, Kenji Numajiri, Shingo Miyagawa, Takahiro Kudo, Satoshi Uchiumi, Masataka Satoh
• p933 Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum   [ 470 K ]
  Authors: Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets, A.A. Lebedev, V.V. Zelenin, M. Kayambaki, K. Zekentes
• p937 Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers   [ 250 K ]
  Authors: P. Lark, Konstantin V. Vassilevski, I. Nikitina, G.J. Phelps, A.B. Horsfall, Nicolas G. Wright
• p941 4H-SiC High Temperature Spectrometers   [ 434 K ]
  Authors: Evgenia Kalinina, Nikita B. Strokan, Alexandr M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev
• p945 4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect   [ 574 K ]
  Authors: Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, S.F. Liotta, Sergio Billotta, Giovanni Bonanno, Massimiliano Belluso
• p949 Fabrication and Test of 3C-SiC Electrostatic Resonators   [ 431 K ]
  Authors: Marcel Placidi, Phillippe Godignon, Jaume Esteve, Narcis Mestres, Gabriel Abadal
• p953 Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions   [ 1 M ]
  Authors: Stanislav Soloviev, Ho Young Cha, James Grande, Peter Sandvik
• p957 Surface Functionalization of SiC for Biosensor Applications   [ 187 K ]
  Authors: R.M. Petoral Jr., G.Reza Yazdi, C. Vahlberg, Mikael Syväjärvi, Anita Lloyd Spetz, K. Uvdal, Rositza Yakimova
• p961 The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation   [ 215 K ]
  Authors: Alexandr M. Ivanov, Nikita B. Strokan, A.A. Lebedev, V.V. Kozlovski
• p965 SiC-Based Power Converters for High Temperature Applications   [ 307 K ]
  Authors: Leon M. Tolbert, Hui Zhang, Madhu S. Chinthavali, Burak Ozpineci