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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p971 Analysis of Novel Packaging Techniques for High Power Electronics in SiC   [ 419 K ]
  Authors: S.J. Rashid, C. Mark Johnson, F. Udrea, Andrej Mihaila, G. Amaratunga, Rajesh Kumar Malhan
• p975 Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications   [ 279 K ]
  Authors: Kent Bertilsson, Chris I. Harris
• p979 Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter   [ 319 K ]
  Authors: Ty McNutt, John Reichl, Harold Hearne, Victor Veliadis, Megan McCoy, Eric Stewart, Stephen Van Campen, Chris Clarke, Dave Bulgher, Dimos Katsis, Bruce Geil, Skip Scozzie
• p983 Fabrication of a Multi-Chip Module of 4H-SiC RESURF-Type JFETs   [ 966 K ]
  Authors: Hideto Tamaso, Jiro Shinkai, Takashi Hoshino, Hitoki Tokuda, Kenichi Sawada, Kazuhiro Fujikawa, Takeyoshi Masuda, Satoshi Hatsukawa, Shin Harada, Yasuo Namikawa
• p987 High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes   [ 186 K ]
  Authors: Praneet Bhatnagar, Nicolas G. Wright, A.B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes
• p991 High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs   [ 457 K ]
  Authors: James D. Scofield, Hiroyuki Kosai, Brett Jordan, Sei Hyung Ryu, Sumi Krishnaswami, Fatima Husna, Anant Agarwal
• p995 Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET   [ 260 K ]
  Authors: Robin L. Kelley, Michael S. Mazzola, William L. Draper
• p999 Microwave p-i-n Diodes and Switches Based on 4H-SiC   [ 413 K ]
  Authors: K. Zekentes, Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets
• p1003 New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process   [ 170 K ]
  Authors: Pierre Brosselard, Dominique Tournier, Miquel Vellvehi, Josep Montserrat, Phillippe Godignon, José Millán
• p1007 OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes   [ 337 K ]
  Authors: Christophe Raynaud, Daniel Loup, Phillippe Godignon, Raul Perez Rodriguez, Dominique Tournier, Dominique Planson