Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
-
p1011
Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
[
692 K
]
Authors: Jon M. Hancock -
p1017
Advances in AlGaN/GaN/SiC Microwave Devices
[
268 K
]
Authors: Michael J. Uren, Martin Kuball -
p1023
A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
[
720 K
]
Authors: Seung Yong Lee, Tae Hong Kim, Duk Il Suh, Ji Eun Park, Eun Kyung Suh, Chang Hee Hong, Sang Kwon Lee -
p1027
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
[
697 K
]
Authors: F. Lucolano, Fabrizio Roccaforte, Filippo Giannazzo, A. Alberti, Vito Raineri -
p1031
Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
[
307 K
]
Authors: G.Reza Yazdi, Mikael Syväjärvi, R. Vasiliauskas, Rositza Yakimova -
p1035
Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs
[
185 K
]
Authors: Akira Nakajima, Shuichi Yagi, Mitsuaki Shimizu, Kazuhiro Adachi, Hajime Okumura -
p1039
Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
[
217 K
]
Authors: Koichi Amari, Jun Suda, Tsunenobu Kimoto -
p1043
Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
[
553 K
]
Authors: Hiroyuki Sazawa, Tomohisa Kato, Kazutoshi Kojima, K. Furuta, K. Hirata, M. Kosaki, M. Kinoshita, Takeshi Mitani, Shinichi Nakashima, Hajime Okumura
