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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p175 Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates   [ 1 M ]
  Authors: A.A. Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel'son, B.S. Razbirin, M.P. Scheglov, A.S. Tregubova, Mikael Syväjärvi, Rositza Yakimova
• p179 Heavily Doped Polycrystalline 3C-SiC Growth on SiO₂/Si (100) Substrates for Resonator Applications   [ 509 K ]
  Authors: Guo Sheng Sun, Jin Ning, Xing Fang Liu, Yong Mei Zhao, Jiaye Li, Lei Wang, Wan Shun Zhao, Liang Wang
• p183 Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD   [ 160 K ]
  Authors: Hideki Shimizu, Akira Kato
• p187 How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism   [ 1 M ]
  Authors: Maher Soueidan, O. Kim-Hak, Gabriel Ferro, P. Chaudouet, Didier Chaussende, B. Nsouli, Yves Monteil
• p191 Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive   [ 354 K ]
  Authors: M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow
• p195 Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC   [ 291 K ]
  Authors: Mikael Syväjärvi, Nut Sritirawisarn, Rositza Yakimova
• p199 Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis   [ 1 M ]
  Authors: Laurence Latu-Romain, Didier Chaussende, L. Rapenne, Michel Pons, Roland Madar
• p203 Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si   [ 653 K ]
  Authors: Jörg Pezoldt, Christian Förster, Thomas Stauden, Volker Cimalla, Francisco M. Morales, Charbel Zgheib, Pierre M. Masri, Oliver Ambacher
• p207 Trends in Dopant Incorporation for 3C-SiC Films on Silicon   [ 153 K ]
  Authors: Marcin Zielinski, M. Portail, Hervé Peyre, T. Chassagne, S. Ndiaye, Bernard Boyer, André Leycuras, Jean Camassel
• p213 Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps   [ 575 K ]
  Authors: K.W. Kirchner, Kenneth A. Jones, Michael A. Derenge, Michael Dudley, Adrian R. Powell