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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p219 6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction   [ 317 K ]
  Authors: Matthias Stockmeier, Rainer Hock, Octavian Filip, Boris M. Epelbaum, Albrecht Winnacker, Andreas Magerl
• p223 Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias   [ 555 K ]
  Authors: Kevin M. Speer, David J. Spry, Andrew J. Trunek, Philip G. Neudeck, M.A. Crimp, J.T. Hile, C. Burda, P. Pirouz
• p227 An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers   [ 888 K ]
  Authors: I. Brazil, Patrick J. McNally, N. Ren, L. O'Reilly, A. Danilewsky, T.O. Tuomi, A. Lankinen, A. Säynätjaki, R. Simon, Stanislav Soloviev, L.B. Rowland, Peter Sandvik
• p231 Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide   [ 780 K ]
  Authors: Yi Chen, Govindhan Dhanaraj, William M. Vetter, Rong Hui Ma, Michael Dudley
• p235 Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)   [ 14 M ]
  Authors: D. Kurt Gaskill, M.A. Mastro, Kok Keong Lew, Brenda L. Van Mil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy Jr.
• p239 Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping   [ 1 M ]
  Authors: Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa, Kazuo Arai
• p243 Defect Etching of Non-Polar and Semi-Polar Faces in SiC   [ 774 K ]
  Authors: Sakwe Aloysius Sakwe, Yeon Suk Jang, Peter J. Wellmann
• p247 Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects   [ 1 M ]
  Authors: Ping Wu, Ejiro Emorhokpor, Murugesu Yoganathan, Thomas Kerr, Jie Zhang, Esteban Romano, Ilya Zwieback
• p251 Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging   [ 341 K ]
  Authors: R. Ishii, Toshiyuki Miyanagi, Isaho Kamata, Hidekazu Tsuchida, Koji Nakayama, Yoshitaka Sugawara
• p255 Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence   [ 1 M ]
  Authors: Igor Matko, Bernard Chenevier, Jean Marie Bluet, Roland Madar, Fabrice Letertre, Wahib Saikaly