HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p259 Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth   [ 204 K ]
  Authors: Peter J. Wellmann, Philip Hens, Sakwe Aloysius Sakwe, Desirée Queren, Ralf Müller, Karsten Durst, Matthias Göken
• p263 Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals   [ 1 M ]
  Authors: Sakwe Aloysius Sakwe, Peter J. Wellmann
• p267 In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC   [ 393 K ]
  Authors: K. Konias, Rainer Hock, Matthias Stockmeier, Peter J. Wellmann, M. Miller, S. Ossege, Andreas Magerl
• p271 Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process   [ 6 M ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, M. Nagano, L. Storasta, Toshiyuki Miyanagi
• p275 Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation   [ 1 M ]
  Authors: Norihiro Hoshino, Michio Tajima, Toshihiko Hayashi, Taro Nishiguchi, Hiroyuki Kinoshita, Hiromu Shiomi
• p279 Partial Dislocations under Forward Bias in SiC   [ 1 M ]
  Authors: G. Savini, A.A. El Barbary, M.I. Heggie, Sven Öberg
• p283 Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System   [ 322 K ]
  Authors: Tomoaki Hatayama, S. Takenami, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
• p287 The D_I Defect is Associated with a Stacking Fault?   [ 6 M ]
  Authors: Kenneth A. Jones, T.S. Zheleva, R.D. Vispute, S.S. Hullavarad
• p291 Trends in Commercially Available SiC Substrates   [ 653 K ]
  Authors: James D. Oliver
• p295 Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy   [ 3 M ]
  Authors: Robert E. Stahlbush, Kendrick X. Liu, Q. Zhang, Joseph J. Sumakeris