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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p299 XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers   [ 766 K ]
  Authors: Tom Ryan, John Hennessy, Colin Harrison, Shou Yin Wang, Gyles Webster, Akihiko Majima
• p303 XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution   [ 413 K ]
  Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi
• p307 (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory   [ 118 K ]
  Authors: Gerhard Pensl, Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, M. Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, Hisayoshi Itoh
• p313 Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC   [ 1 M ]
  Authors: John W. Steeds
• p319 A Study of the D_II Defect after Electron Irradiation and Annealing of 4H SiC   [ 465 K ]
  Authors: W. Sullivan, John W. Steeds
• p323 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers   [ 325 K ]
  Authors: Gil Yong Chung, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, Darren M. Hansen
• p327 Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers   [ 1 M ]
  Authors: Matthias Wagner, E. Mustafa, S. Hahn, Mikael Syväjärvi, Rositza Yakimova, S. Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann
• p331 Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy   [ 183 K ]
  Authors: Katsunori Danno, Tsunenobu Kimoto
• p335 Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC   [ 172 K ]
  Authors: Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita
• p339 Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes   [ 268 K ]
  Authors: W.S. Loh, C. Mark Johnson, J.S. Ng, Peter Sandvik, Steve Arthur, Stanislav Soloviev, J.P.R. David