Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
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p343
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
[
467 K
]
Authors: M. Obernhofer, Michael Krieger, Frank Schmid, Heiko B. Weber, Gerhard Pensl, Adolf Schöner -
p347
Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
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301 K
]
Authors: Laurent Ottaviani, Damien Barakel, E.B. Yakimov, Marcel Pasquinelli -
p351
Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
[
255 K
]
Authors: Sandrine Juillaguet, T. Guillet, R. Bardoux, Jean Camassel, T. Chassagne -
p355
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
[
328 K
]
Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, S. Greulich-Weber, U. Gerstmann, Andreas Pöppl, J. Hoentsch, E. Rauls, Yurii Rozentzveig, E.N. Mokhov, Mikael Syväjärvi, Rositza Yakimova -
p359
Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
[
409 K
]
Authors: Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, Hidehisa Hashizume -
p363
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
[
167 K
]
Authors: Jörg Pezoldt, Christian Förster, Volker Cimalla, Florentina Will, Ralf Stephan, Klemens Brückner, Matthias Hein, Oliver Ambacher -
p367
Impurity Conduction in Silicon Carbide
[
569 K
]
Authors: Michael Krieger, Kurt Semmelroth, Heiko B. Weber, Gerhard Pensl, Martin Rambach, Lothar Frey -
p371
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
[
1 M
]
Authors: Andreas Gällström, B. Magnusson, P. Carlsson, N.T. Son, Anne Henry, Franziska Beyer, Mikael Syväjärvi, Rositza Yakimova, Erik Janzén -
p375
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
[
162 K
]
Authors: Andres Udal, Enn Velmre -
p379
Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
[
178 K
]
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
