Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
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p383
Micro-Photoluminescence Mapping of Defect Structures in SiC Wafers
[
489 K
]
Authors: John Hennessy, Tom Ryan -
p387
Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer
[
182 K
]
Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng -
p391
Nitrogen Donor Aggregation in 4H-SiC: g-Tensor Calculations
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587 K
]
Authors: U. Gerstmann, E. Rauls, S. Greulich-Weber, E.N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri -
p395
Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range
[
990 K
]
Authors: K. Neimontas, Kestutis Jarašiūnas, Maher Soueidan, Gabriel Ferro, Yves Monteil -
p399
Optical and Electron Paramagnetic Resonance Study of Sponge Silicon Carbide Prepared by Direct Synthesis
[
276 K
]
Authors: V.S. Kiselov, E.N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk, Rositza Yakimova -
p403
Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS
[
218 K
]
Authors: Nada Habka, Veronique Soulière, Jean Marie Bluet, Maher Soueidan, Gabriel Ferro, Yves Monteil -
p407
Photoluminescence of 6H-SiC Nanostructures
[
997 K
]
Authors: Jacques Botsoa, Jean Marie Bluet, Vladimir Lysenko, Olivier Marty, Daniel Barbier, Gérard Guillot -
p411
Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques
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284 K
]
Authors: Bharat Krishnan, Sashi Kumar Chanda, Yaroslav Koshka -
p415
Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates
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634 K
]
Authors: M.J. Clouter, Yue Ke, R. P. Devaty, W.J. Choyke, Y. Shishkin, S.E. Saddow -
p419
Reverse Biased Electrochemical Etching of SiC-SBD
[
2 M
]
Authors: Koichi Nishikawa, Yuusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, Hiroaki Iwakuro
