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An Examination of Cluster Nucleation of Goss Oriented Grains Formed during Secondary Recrystallisation in an Fe-3.2% Si Electrical Steel
Abstract:
The idea that a single subgrain is sufficient to produce a single recrystallised grain is the
simplest explanation for the recrystallisation process. Likewise, a single Goss oriented grain arising
from the primary recrystallisation process is the simplest unit which can give rise to a secondary
Goss oriented grain. More complicated cluster models, for example subgrain coalescence is also
considered feasible for primary recrystallisation, clusters of Goss oriented grains might be another
mechanism for forming Goss oriented secondary grains. This paper examines the cluster theory
using material which is produced by the ARMCO process which requires two stages of rolling. In
order to achieve this aim it is necessary to destroy the connectivity between individual Goss
oriented grains by using thin foils derived from sheet which gives a strong Goss texture on
conventional annealing. The foils were sectioned from the subsurface which had a strong η fibre
after primary recrystallisation, and ranged in thickness from 18μm (the average grain size after
primary recrystallisation) up to 80μm, which is the approximate thickness of the η textured layer.
The central layer, which had the classical {111}
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Pages:
723-728
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Online since:
October 2007
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© 2007 Trans Tech Publications Ltd. All Rights Reserved
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