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Dislocation Structure of 10° Low-Angle Tilt Grain Boundary in α-Al2O3

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Abstract:

Dislocation structure of 10º low-angle tilt grain boundary in α-Al2O3 has been observed by high-resolution electron microscopy (HRTEM). It was found that perfect <1120> edge dislocations, which are introduced to compensate the misorientation, dissociated into two mixed partial dislocations with {1120} stacking-fault in between. The distances between the two partials were estimated by the force balances between repulsive forces of periodical dislocations and attractive forces from stacking-fault. The stacking-fault energy for 10o low-angle tilt grain boundary was estimated to be much higher than the previously reported value.

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Periodical:

Materials Science Forum (Volumes 558-559)

Pages:

979-982

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.558-559.979

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Online since:

October 2007

Authors:

E. Tochigi, A. Nakamura, Naoya Shibata, Takahisa Yamamoto, K.P.D. Lagerlöf, Yuichi Ikuhara

Keywords:

Aluminum (Al), Bi-Crystal, Dislocation, Grain Boundary, Stacking Fault, TEM

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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