0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Dan Xie; Zhi Gang Zhang; Tian Ling Ren; Li Tian Liu

doi:10.4028/www.scientific.net/KEM.368-372.1814

Paper Titles

Toughness and Superplastic Deformation of Laminated Ceramic
p.1799

Effect of Residual Stress on the Mechanical Capacity of Layered Composite
p.1803

Transient Thermal Stress Analysis of a Plate with Double-Sided FGM Coatings
p.1807

Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi₄Ti₄O₁₅ Films with Different Orientation
p.1811

0.75SrBi₂Ta₂O₉-0.25Bi₃TiTaO₉ Layered Structural Thin Films: Microstructure and Ferroelectric Properties
p.1814

Microstructure and Dielectric Properties of Li_xTi_xNi_1-2xO Thin Films
p.1817

A Stepwise Control Route for the Preparation of Mg-Al, Zn-Al, and Mg-Fe Layered Double Hydroxides (LDHs)
p.1820

Fabrication of ZrO₂-SUS Functionally Graded Materials by Slip Casting
p.1823

Preparation of Nano-Laminated Composite by Electrophoretic Deposition
p.1825

HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-3720.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural...

0.75SrBi₂Ta₂O₉-0.25Bi₃TiTaO₉ Layered Structural Thin Films: Microstructure and Ferroelectric Properties

Abstract:

{0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2, respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.