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Interfacial Behavior of SiC-Based Boundary Layer Capacitors

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Abstract:

SiC-based boundary layer capacitors were prepared by hot pressing. XRD, TEM and the high-resolution TEM techniques were used to characterize the sintered samples. It was found that the width of the grain boundary within the SiC-based boundary capacitors was about 200 nm. Extremely high dielectric constant of >2,400,000 appeared in a wide temperature range from 590oC to 730oC, with the maximum of >2,900,000. The critical temperature was about 500oC. Space charge polarization was detected as the temperature increased. Nano grains in the boundary phase were observed, which might enhance the space charge behavior.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Pages:

235-237

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.368-372.235

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Online since:

February 2008

Authors:

Rui Zhang, Hai Long Wang, Hong Liang Xu, Hong Xia Lu, Dao Yuan Yang

Keywords:

Boundary Layer Capacitors, Interface, Silicon Carbide (SiC), Space Charge

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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