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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p67 Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors   [ 137 K ]
  Authors: J. Petit, G. Allan, Michel Lannoo
• p73 Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials   [ 248 K ]
  Authors: Vitor J.B. Torres, Pierre M. Masri, A.M. Stoneham
• p79 Effects of Doping and Alloying on Native Defects and Complex Formation in Hg_1-x Cd_xTe   [ 302 K ]
  Authors: C.G. Morgan-Pond
• p85 The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide   [ 279 K ]
  Authors: L.A. Hemstreet
• p91 Defect Calculations in a Modified Haldane-Anderson Model   [ 214 K ]
  Authors: W. Beall Fowler
• p97 Electronic Structure of Neutral Complex Defects in Silicon   [ 276 K ]
  Authors: Bo Monemar, U. Lindefelt, W.M. Chen, Q.X. Zhao, H. Weman
• p103 High Temperature Investigations of Silicon by Means of Positron Annihilation   [ 489 K ]
  Authors: S. Dannefaer
• p115 Theoretical Determination of the Vacancy Migration Energy in Silicon   [ 273 K ]
  Authors: P.J. Kelly, Roberto Car, Sokrates T. Pantelides
• p121 Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism   [ 242 K ]
  Authors: K. Pandey
• p127 Germanium Impurity Diffusion in Boron Doped Silicon   [ 252 K ]
  Authors: A.L. Bouchetout, N. Tabet, Claude J.A. Monty