HOME CONTACT

Username: Password:

> @scientific.net

Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p639 Vanadium in GaAs and GaP   [ 193 K ]
  Authors: W. Ulrici, L. Eaves, K. Friedland, D.P. Halliday, J. Kreissl
• p645 Properties of Titanium in GaAs and InP   [ 204 K ]
  Authors: A.M. Hennel, C.D. Brandt, K.Y. Ko, L.M. Pawlowicz
• p651 Study of Transition Metal Deep Donor Levels in InP   [ 200 K ]
  Authors: Bertrand Lambert, Yves Toudic, R. Coquille, G. Grandpierre, M. Gauneau
• p657 The Donor Level Ti³⁺/Ti⁴⁺ in InP: Electrical and Optical Properties   [ 190 K ]
  Authors: G. Bremond, Gérard Guillot, A. Nouailhat, Bertrand Lambert, Yves Toudic, M. Gauneau, B. Deveaud
• p663 Study of the Cr ²⁺ Luminescence in GaAs as a Function of Hydrostatic Pressure   [ 262 K ]
  Authors: M. Zigone, H. Roux-Buisson, G. Martinez
• p669 Optical, Electrical and EPR Studies of GaAs:Ni   [ 184 K ]
  Authors: W. Ulrici, L. Eaves, K. Friedland, D.P. Halliday, B. Ulrici, J. Kreissl
• p675 The Luminescence at 0.844 eV in GaAs:Cr - A Zeeman Spectroscopy   [ 178 K ]
  Authors: V. Thomas, J.J. Barrau, G. Armelles, B. Deveaud, Bertrand Lambert
• p681 Optical Detection of Magnetic Resonance in the Optically Excited ²F_5/2-State of Yb³⁺ in InP   [ 239 K ]
  Authors: R. Kallenbach, H.J. Reyher, J. Unruh, Albrecht Winnacker, H. Ennen
• p687 On the Evidence for the Effect of Local Symmetry on the Photoionization Spectrum of Fe²⁺ in InP   [ 231 K ]
  Authors: P. Motisuke, F. Iikawa, Marilia J. Caldas, A. Fazzio, J.R. Pereira Neto
• p693 Non-Stationary Infrared-Optical Processes Involving Deep Impurities in III-V Compound Semiconductors   [ 290 K ]
  Authors: J.H. Crasemann, H.-J. Schulz