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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p699 Optically-Detected Magnetic Resonance of Gold Centres in Zinc Selenide   [ 275 K ]
  Authors: N.R.J. Poolton, J.E. Nicholls, J.J. Davies, B.J. Fitzpatrick
• p705 Structure of Pd, Pt and Au Impurities in Silicon: The Energy Levels under Uniaxial Stress and Hydrostatic Pressure   [ 258 K ]
  Authors: W. Stöffler, Joerg Weber
• p711 Interstitial 3d Transition Metal Impurities in Silicon: An Ab Initio Cluster Study   [ 334 K ]
  Authors: G. Aissing, R. Broer, W.C. Nieuwpoort, L.F. Feiner
• p717 Photoluminescence Studies on Gallium-Related Deffects in Silicon   [ 300 K ]
  Authors: Klaus Thonke, U. Schall, R. Sauer, N. Bürger
• p723 Identification of the Energy Levels of Si:Pd by DLTS   [ 289 K ]
  Authors: Jie Zhou, Sheng Yang Ruan, Hao Hong, Wei Kun Ge
• p729 Electrons of 3d Transition Metals in Silicon   [ 323 K ]
  Authors: E.G. Sieverts, D.A. Van Wezep, R. Van Kemp, C.A.J. Ammerlaan
• p735 High Resolution Transmission Electron Microscopy of Semiconductors and Their Defects   [ 813 K ]
  Authors: A. Ourmazd
• p745 Classification of Defects in Plastically Deformed Silicon   [ 238 K ]
  Authors: C. Kisielowski-Kemmerich, J. Czaschke, H. Alexander
• p751 The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon   [ 541 K ]
  Authors: Kevin S. Jones, S. Prussin, Eicke R. Weber
• p757 The Role of Point Defects in the Nucleation of Film Edge Induced Dislocations in Silicon   [ 314 K ]
  Authors: Jan Vanhellemont, C. Claeys, J. Van Landuyt