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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p881 Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon   [ 336 K ]
  Authors: Etienne G. Colas, Eicke R. Weber, R. Hull
• p887 Enhanced Oxygen Diffusion in Silicon at Low Temperatures   [ 262 K ]
  Authors: A.K. Tipping, R.C. Newman, D.C. Newton, J.H. Tucker
• p893 The 3942 cm^-1 Optical Band in Irradiated Crystalline Silicon   [ 250 K ]
  Authors: Gordon Davies, Edward C. Lightowlers, Michael Stavola, K. Bergman, B.G. Svensson
• p899 N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon   [ 268 K ]
  Authors: H. Itoh, Kenji Murakami, K. Takita, Kohzoh Masuda
• p905 Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon   [ 228 K ]
  Authors: V.M.S. Gomes, J.R. Leite
• p911 Chalcogen Double Donors in Silicon   [ 240 K ]
  Authors: Gerhard Pensl, G. Roos, C. Holm, P. Wagner
• p917 The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond   [ 171 K ]
  Authors: Maria Helena Nazaré
• p923 The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds   [ 192 K ]
  Authors: J.A. Van Wyk, J.H.N. Loubser
• p929 Electronic and Vibrational Absorption of Interstitial Carbon in Silicon   [ 252 K ]
  Authors: R. Woolley, Edward C. Lightowlers, A.K. Tipping, M. Claybourn, R.C. Newman
• p935 Ion-Implanted Oxygen Isotopes in Silicon   [ 268 K ]
  Authors: H.J. Stein